I. SK Hynix
1. Cheongju M15X (Key DRAM/HBM Capacity): Expected Shipment Schedule: Gradually contributing to HBM-related supply from 2026 onwards; becoming one of the core sources of incremental AI DRAM supply in 2026-2027.
2. Yongin Cluster: Expected Shipment Schedule: First fab enters production stage in 2027; multiple fabs continuously expand capacity from 2028-2030; full-scale HBM and advanced DRAM base by 2030+.
3. HBM Packaging Base in Indiana, USA: Expected Shipment Schedule: Packaging capacity gradually forms in 2027-2028; large-scale support for HBM shipments begins in 2028.
II. Samsung Electronics
1. Pyeongtaek P4/P5 Production Line Cluster (Core DRAM and HBM): Expected Shipment Schedule: Partial trial production and customer verification in 2027; mass production stage in 2028. 2. HBM Dedicated Capacity Expansion (Cheonan / Onyang) Expected Shipment Schedule: Entering the HBM4 mass production window in 2027–2028.
III. Micron
1. Idaho / New York (Advanced DRAM Base) Expected Shipment Schedule: Initial wafer output begins in mid-to-late 2027; large-scale supply begins in 2028+.
2. Singapore NAND + DRAM Hybrid Capacity Expansion Expected Shipment Schedule: HBM/NAND related capacity expansion begins to contribute to output in 2027; stable shipment cycle begins in 2028.
Summary: From the capacity expansion situation, the expansion of the three companies will begin to "gradually materialize" in 2027, but structural gaps still exist. HBM supply will remain a bottleneck. A new round of concentrated release of HBM and DRAM capacity will begin in 2028, and the price cycle may enter a rebalancing phase.
