Samsung Electronics' chief technology officer and head of its Semiconductor Research Institute said at an internal Device Solutions division briefing on June 30 that HBM4E reliability-test yields have risen above 70%. While the industry typically treats roughly 80% as a mature-process yield threshold, Samsung said HBM4E remains in reliability testing and the >70% level marks entry into a stable development phase. He also said Samsung's next‑generation 10nm‑class seventh‑generation DRAM process (

Samsung Electronics' chief technology officer and head of its Semiconductor Research Institute said at an internal Device Solutions division briefing on June 30 that HBM4E reliability-test yields have risen above 70%. While the industry typically treats roughly 80% as a mature-process yield threshold, Samsung said HBM4E remains in reliability testing and the >70% level marks entry into a stable development phase. He also said Samsung's next‑generation 10nm‑class seventh‑generation DRAM process (D1d) has gained a technical edge over competitors and is scheduled to complete production readiness assessment (PRA) in November.