Samsung Electronics' chief technology officer and head of its Semiconductor
Research Institute said at an internal Device Solutions division briefing on
June 30 that HBM4E reliability-test yields have risen above 70%. While the
industry typically treats roughly 80% as a mature-process yield threshold,
Samsung said HBM4E remains in reliability testing and the >70% level marks entry
into a stable development phase. He also said Samsung's next‑generation
10nm‑class seventh‑generation DRAM process (D1d) has gained a technical edge
over competitors and is scheduled to complete production readiness assessment
(PRA) in November.
