Sept 22 — Alibaba Cloud unveiled Fanhua Plan 2.0 and formally upgraded its cloud marketplace into an AI Application Market. The platform will aggregate large models, AI applications and industry solutions into a one-stop offering to accelerate enterprise adoption amid rising demand for models and sector-specific AI. The AI Application Market will partner across education, finance, healthcare, retail, manufacturing, research and gaming, targeting customer service, marketing and digital employee u

2026-09-23

Sept 22 — Alibaba Cloud unveiled Fanhua Plan 2.0 and formally upgraded its cloud marketplace into an AI Application Market. The platform will aggregate large models, AI applications and industry solutions into a one-stop offering to accelerate enterprise adoption amid rising demand for models and sector-specific AI. The AI Application Market will partner across education, finance, healthcare, retail, manufacturing, research and gaming, targeting customer service, marketing and digital employee use cases to streamline discovery, procurement and deployment of AI products and expand enterprise AI supply.

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2026-09-22

據半島電視臺:伊拉克外交部已通知交通部,停止在伊拉克各機場爲伊朗航空公司提供支持。

2026-09-23

【三星調整下一代DRAM路線圖 加速推進混合鍵合技術】據ZDNet Korea 23日報道,三星電子已將此前獨立研發的B1b技術納入正式路線圖,並將下一代“D0a”的定義由垂直溝道晶體管(VCT)DRAM調整爲B1b,而VCT則更名爲“D0a-V”並繼續並行研發。D0a將是三星首款10納米以下DRAM。目前量產的1c爲第六代10納米級DRAM,下一代1d預計是最後一代10納米級產品(相關納米數字屬於技術代際的市場命名,並非實際物理尺寸)。B1b將存儲單元與外圍電路分別製造在不同晶圓上,再通過晶圓對晶圓(W2W)混合鍵合連接,可提高集成密度,並允許兩部分分別採用優化工藝。由於W2W混合鍵合已在CMOS圖像傳感器和高層數NAND閃存中實現量產,B1b商業化門檻低於VCT,因此三星正優先推進。公司還在評估將B1b用於HBM5,預計HBM5約於2029年量產;基於B1b的D0a DRAM距離商業化至少還有兩年。業內認爲,未來VCT DRAM和3D DRAM也可能以B1b爲基礎進一步發展。