Samsung Electronics said it has developed a UFS 5.0 universal flash storage product built on ninth-generation V‑NAND (V9) and optimized for edge AI. The device delivers 10.8 GB/s transfer bandwidth, with sequential read at 10.8 GB/s and sequential wr

2026-06-23

Samsung Electronics said it has developed a UFS 5.0 universal flash storage product built on ninth-generation V‑NAND (V9) and optimized for edge AI. The device delivers 10.8 GB/s transfer bandwidth, with sequential read at 10.8 GB/s and sequential write at 9.5 GB/s. Bandwidth is roughly double that of UFS 4.1, aimed at faster processing of very large data volumes.