SK Hynix is aggressively pushing forward with its 10nm sixth-generation (1c) DRAM: Yield reaches 80%, over half capacity to be converted this year. SK Hynix is accelerating the development of its 10nm sixth-generation (1c) DRAM, with investment in extreme ultraviolet (EUV) equipment for the process increasing by approximately three times compared to original plans. Industry sources reveal that SK Hynix is focusing its efforts on developing 1c DRAM technology for use in its seventh-generation high-bandwidth memory HBM4E core chips, with samples planned for delivery this year. SK Hynix must accelerate its R&D pace as its largest HBM customer, Nvidia, plans to launch its next-generation AI accelerator, "Vera Rubin Ultra," equipped with HBM4E, in the second half of next year. Industry sources indicate that SK Hynix's 1c DRAM yield has reached 80%. The company plans to convert over half of its DRAM capacity to 1c process products this year, expecting to secure approximately 190,000 wafers by the end of the year. (dealsite)
